VBIC95, the vertical bipolar inter-company model

被引:149
作者
McAndrew, CC
Seitchik, JA
Bowers, DF
Dunn, M
Foisy, M
Getreu, I
McSwain, M
Moinian, S
Parker, J
Roulston, DJ
Schroter, M
vanWijnen, P
Wagner, LF
机构
[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265
[2] ANALOG DEVICES INC,SUNNYVALE,CA 94087
[3] HEWLETT PACKARD CORP,SANTA ROSA,CA 95043
[4] MOTOROLA INC,AUSTIN,TX 78721
[5] ANALOGY,BEAVERTON,OR 97075
[6] METASOFTWARE,CAMPBELL,CA 95008
[7] AT&T BELL LABS,READING,PA 19612
[8] NATL SEMICOND CORP,SANTA CLARA,CA 95052
[9] UNIV WATERLOO,WATERLOO,ON N2L 3G1,CANADA
[10] BELL NO RES LTD,KANATA,ON,CANADA
[11] INTEL PHILIPS,SANTA CLARA,CA 95052
[12] IBM CORP,HOPEWELL JCT,NY 12533
关键词
D O I
10.1109/4.540058
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper details the VBIC95 bipolar junction transistor (BJT) model. The model was developed as an industry standard replacement for the SPICE Gummel-Poon (SGP) model, to improve deficiencies of the SGP model that have become apparent over time because of the advances in BJT process technology, VBIC95 is still based on the Gummel-Poon formulation, and thus can degenerate to be similar to the familiar SGP model, However, it includes improved modeling of the Early effect, quasi-saturation, substrate and oxide parasitics, avalanche multiplication, and temperature behavior that can be invoked selectively based on model parameter values.
引用
收藏
页码:1476 / 1483
页数:8
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