Improvement of light extraction efficiency of flip-chip light-emitting diode by texturing the bottom side-surface of sapphire substrate

被引:76
作者
Han, Dae-Seob [1 ]
Kim, Ja-Yeon
Na, Seok-In
Kim, Sang-Hoon
Lee, Ki-Dong
Kim, Bongjin
Park, Seong-Ju
机构
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
[2] Gwangju Inst Sci & Technol, Natl Res Lab Nanophoton Semicond, Kwangju 500712, South Korea
[3] LG Elect Inst Technol, Devices & Mat Lab, Seoul 137724, South Korea
[4] Ninex Co Ltd, Dept Res, Kyonggi Do 459040, South Korea
关键词
dry etching; extraction efficiency; GaN; inductively coupled plasma (ICP); light-emitting diodes (LEDs); light-output power; sapphire etching;
D O I
10.1109/LPT.2006.877565
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high light-extraction efficiency was demonstrated in the flip-chip light-emitting diode (FCLED) with a textured sapphire substrate. The bottom side of a sapphire substrate was patterned using a dry etching process to increase the light-extraction efficiency. Light output power measurements indicated that the scattering of photons emitted in the active layer was considerably enhanced at the textured sapphire substrate resulting in an increase in the probability of escaping from the FCLED. The light-output power of the FCLED was increased by 40.2% for a 0.4-mu m deep FCLED with a periodic distance of 1.3-mu m, mesh-type texture on the bottom side of the sapphire substrate.
引用
收藏
页码:1406 / 1408
页数:3
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