Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films

被引：2

作者：

Gao, Haiyong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 35卷 / 01期

基金：

中国国家自然科学基金;

关键词：

GaN nanorods; Ga2O3/ZnO films; RF magnetron sputtering; nitridation;

D O I：

10.1016/j.physe.2006.06.020

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Gallium nitride (GaN) nanorods were synthesized by nitriding Ga2O3/ZnO films which were deposited in turn on Si (111) substrates using radio frequency (RF) magnetron sputtering system. In the nitridation process, ZnO was reduced to Zn and Zn sublimated at 950 degrees C. Ga2O3 was reduced to Ga2O and Ga2O reacted with NH3 to synthesize GaN nanorods with the assistance of the sublimation of Zn. The morphology and structure of the nanorods were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The composition of GaN nanorods was studied by Fourier-transform infrared spectrophotometer (FTIR). The synthesized nanorods is hexagonal wurtzite structured. Nitridation time of the samples has an evident influence on the morphology of GaN nanorods synthesized by this method. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：117 / 120

页数：4

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