Self-phase-modulation in submicron silicon-on-insulator photonic wires

被引:186
作者
Dulkeith, Eric
Vlasov, Yurii A.
Chen, Xiaogang
Panoiu, Nicolae C.
Osgood, Richard M., Jr.
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] Columbia Univ, Microelect Sci Labs, New York, NY 10027 USA
来源
OPTICS EXPRESS | 2006年 / 14卷 / 12期
关键词
D O I
10.1364/OE.14.005524
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We measure the transmission of ps-pulses through silicon-on-insulator submicron waveguides for excitation wavelengths between 1400 and 1650 nm and peak powers covering four orders of magnitude.Self-phase-modulation induced spectral broadening is found to be significant at coupled peak powers of even a few tens of mW. The nonlinear-index coefficient, extracted from the experimental data, is estimated as n(2) similar to 5(.)10(-18) m(2)/W at 1500 nm. The experimental results show good agreement with model calculations that take into account nonlinear phase shift, first- and second order dispersion, mode confinement, frequency dispersion of n2, and dynamics of two-photon-absorption-generated free carriers. Comparison with theory indicates that an observed twofold increase of spectral broadening between 1400 and 1650 nm can be assigned to the dispersion of n2 as well as first order-rather than second-order dispersion effects. The analysis of pulse broadening, spectral shift and transmission saturation allows estimating a power threshold for nonlinearity-induced signal impairment in nanophotonic devices. (c) 2006 Optical Society of America.
引用
收藏
页码:5524 / 5534
页数:11
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