Theory of Raman-mediated pulsed amplification in silicon-wire waveguides

被引：149

作者：

Chen, XG ^{[1
]}

Panoiu, NC ^{[1
]}

Osgood, RM ^{[1
]}

机构：

[1] Columbia Univ, Microelect Sci Labs, New York, NY 10027 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2006年 / 42卷 / 1-2期

关键词：

coupled mode analysis; Raman amplification; silicon nanowire waveguide; stimulated Raman scattering (SRS);

D O I：

10.1109/JQE.2005.861827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a comprehensive theoretical study of pulsed stimulated Raman scattering in silicon wires. The pulse dynamics is described by a system of coupled equations, which describes intrinsic waveguide optical losses, phase shift and losses due to free-carriers (FCs) generated through two-photon absorption (TPA), first- and second-order frequency dispersion, self-phase and cross-phase modulation, TPA losses, and the inter-pulse Raman interaction. Furthermore, the influence of the FCs on the pulse dynamics is incorporated through a rate equation. The corresponding system of equations has then been numerically, integrated, and phenomena such as noise-seeded Raman amplification, pulsed Raman amplification, and Raman-mediated pulse interaction have been described.

引用

页码：160 / 170

页数：11

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