Demonstration of directly modulated silicon Raman laser

被引：77

作者：

Boyraz, O ^{[1
]}

Jalali, B ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USA

来源：

OPTICS EXPRESS | 2005年 / 13卷 / 03期

关键词：

D O I：

10.1364/OPEX.13.000796

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The first Raman laser with intra-cavity electronic switching is demonstrated. Digital control of intra-cavity gain is attained by using a diode gain cavity. In contrast to traditional Raman lasers, the Raman laser reported here is made from pure silicon and can be directly modulated to transmit data. Room temperature operation with 2.5W peak laser output power is demonstrated. (C) 2005 Optical Society of America.

引用

页码：796 / 800

页数：5

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