Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator

In this paper, we propose and analyze a novel compact electrooptic modulator on, a silicon-on-insulator (SOI) rib waveguide. The device confines both optical field and, charge carriers in a micron-size region. The optical field is confined by using a planar Fabry-Perot microcavity with deep Si/SiO2 Bragg reflectors. Carriers, are laterally confined in the cavity region by employing deep-etched trenches. The refractive index. of the cavity is varied by using the free.-carrier dispersion effect produced by a p-i-n diode. The device has been designed and, analyzed using electrical and optical simulations. Out calculations predict, for a 20-mum-long device, a modulation depth of around 80%, and a transmittance of 86% at an operating wavelength of 1.55 mum by using An electrical power under dc conditions on the order of 25 muW.