Reactive ion etching of InP/InAlGaAs/InGaAs heterostructures

被引：5

作者：

Lemm, C ^{[1
]}

Kollakowski, S ^{[1
]}

Bimberg, D ^{[1
]}

Janiak, K ^{[1
]}

机构：

[1] HEINRICH HERTZ INST NACHRICHTENTECH BERLIN GMBH,D-10587 BERLIN,GERMANY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 09期

关键词：

D O I：

10.1149/1.1837936

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

InAlGaAs in combination with InP, InGaAs, and InAlAs is an attractive material for long wavelength applications. Reactive ion etching of InP/InAlGaAs/InGaAs heterostructures using CH4/H-2/Ar plasma is systematically investigated and optimization is obtained. The etching process is investigated as a function of radio-frequency power density and total pressure and its results are characterized in terms of etch rate, surface-roughness, and etch profile. Etch conditions for the smooth and reproducable etching of Al-containing heterostructures are reported. The quality of the results achieved is reflected by excellent quality epitaxial InP overgrowth.

引用

页码：L255 / L257

页数：3

共 10 条

[1]

HASNAIN G, 1994, P 6 INT C INP REL MA

[2]

KOLLAKOWSKI S, 1997, IN PRESS IEEE PHOTON, V9

[3]

KOLLAKOWSKI S, IN PRESS IEEE PHOTON

[4]

KOVAC J, 1996, P 8 INT C INP REL MA, P219

[5]

KRAUTLE H, COMMUNICATION

[6] Comparison of masking materials for high microwave power CH4/H-2/Ar etching of III-V semiconductors [J].

Lee, JW ;

Crockett, RV ;

Pearton, SJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :1752-1757

[7] DRY ETCHING CHARACTERISTICS OF IN1-X-YGAXALYAS ALLOYS IN CCL2F2-AR AND CH4-H2-AR DISCHARGES [J].

PEARTON, SJ ;

KOPF, RF .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (07) :535-539

[8] IMPROVED PERFORMANCE OF LARGE-AREA INP/INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS BY SULFUR PASSIVATION [J].

SCHADE, U ;

KOLLAKOWSKI, S ;

BOTTCHER, EH ;

BIMBERG, D .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1389-1391

[9]

SCHRAMM JE, 1994, P 6 INT C INP REL MA, P383

[10] High speed, high efficiency resonant-cavity enhanced InGaAs MSM photodetectors [J].

Strittmatter, A ;

Kollakowski, S ;

Droge, E ;

Bottcher, EH ;

Bimberg, D .

ELECTRONICS LETTERS, 1996, 32 (13) :1231-1232

← 1 →