Oxidation kinetics of epitaxial Ge-covered Si(100) surfaces

We compared oxidation kinetics on Ge-covered Si(100) surfaces grown at 350 and 600 degrees C for 0.9 and 2.0 ML Ge overlayer thicknesses. The O-KLL intensities showed clear oxidation enhancement on the surfaces grown at 600 degrees C. The oxygen interaction for the surface covered with 2 ML Ge formed at 350 degrees C was weaker than for the Ge(100) surface, indicating that the compressive strain due to the lattice mismatch may suppress the oxygen interaction with surface Ge dimers.