Surface-phonon characterization of InP, GaP and GaAs quantum dots confined in dielectric hosts

被引：6

作者：

Henderson, DO ^{[1
]}

Ueda, A ^{[1
]}

Tung, YS ^{[1
]}

Mu, R ^{[1
]}

White, WC ^{[1
]}

Zuhr, RA ^{[1
]}

Zhu, JG ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,OAK RIDGE,TN 37831

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1997年 / 30卷 / 10期

关键词：

D O I：

10.1088/0022-3727/30/10/007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The proper combination of sequential ion implantation and thermal annealing can successfully fabricate binary semiconductor quantum dots (QDs), such as InP, GaP and GaAs QDs. Far-infrared reflectance techniques can be effectively employed to identify the species formed before and after various thermal treatments via probing molecular vibrations and surface phonons of the QDs. This technique is very useful for the characterization of an ultra-thin layer of foreign species on or in the near surface of the bulk substrate materials. In addition, this technique is non-destructive, simple and versatile. The examples given in the present report are InP and GaP QDs formed in fused silica and GaAs QDs formed in fused silica and in Al2O3 [0001] substrates.

引用

页码：1432 / 1435

页数：4

共 21 条

[11] OPTICAL PHONONS OF SMALL CRYSTALS [J].