Effects of crystal originated particles on breakdown characteristics of ultra thin gate oxide

被引：6

作者：

Cho, WJ

Lee, KS

Cha, YK

Park, CW

Shim, HS

Kim, YC

Kuwano, H

机构：

[1] LG Semicon Ltd, Memory Business HQ, Process Dev Team, Hungduk Ku, Cheongju 361480, South Korea

[2] Keio Univ, Fac Sci & Technol, Dept Elect & Elect Engn, Kohoku Ku, Yokohama, Kanagawa 223, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 11期

关键词：

CZ-silicon wafers; pulling speed; crystal originated particles; ultra thin gate oxide; breakdown characteristics;

D O I：

10.1143/JJAP.38.6184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of crystal originated particles (COPs) on the ultra thin gate oxide for recent ultra large-scale integration (ULSI) devices have been studied. Various types of Czochralski (CZ) silicon wafers were prepared by control the pulling speed of silicon ingot re, clarify the relationships between COPs and breakdown characteristics of the ultra thin gate oxide. The distribution of COPs, measured by optical shallow defect analyzer and particle counter: was compared with the results of time zero dielectric breakdown (TZDB), time dependent dielectric breakdown (TDDB) and sl ess induced leakage current (SILC) for gate oxides with the thickness of 4.5-10 nm. As a result, it was found that the effect of COPs is not a major factor for the degradation of ultra thin gate oxide in recent ULSI devices.

引用

页码：6184 / 6187

页数：4

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