Influence of crystal originated particles on gate oxide breakdown

被引：19

作者：

Deai, H

Iwasaki, T

Ikematsu, Y

Kawakami, K

Harada, H

Matsumura, A

机构：

[1] NSC ELECTRON CORP, YAMAGUCHI 743, JAPAN

[2] NIPPON STEEL CORP LTD, ADV TECHNOL RES LABS, SAGAMIHARA, KANAGAWA 229, JAPAN

[3] NIPPON STEEL CORP LTD, ADV MAT & TECHNOL RES LABS, NAKAHARA KU, KAWASAKI, KANAGAWA 211, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 11B期

关键词：

silicon; crystal-originated particle; defect; oxide breakdown; copper plating;

D O I：

10.1143/JJAP.35.L1476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defects causing gate oxide breakdown in Czochralski silicon were evaluated using a location marking technique by Copper plating. The cross sectional structure of the defect was observed by a combination technique of focused ion beam (FIB) etching at the marked location and transmission electron microscopy (TEM) and found to have similar appearances and sizes to those of crystal originated particles (COPs) observed by atomic force microscopy (AFM). Correlation between locations of the defects at a wafer surface determined using the copper plating and those of COPs determined using a particle counter was investigated for various electric field applied for the copper plating. We found that COPs are one of the major factors causing gate oxide breakdown at fields around 4MV/cm, while other factors become dominant when a higher electric field is applied.

引用

页码：L1476 / L1479

页数：4

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