The Child-Langmuir law as a model for electron transport in semiconductors

被引：14

作者：

BenAbdallah, N ^{[1
]}

Degond, P ^{[1
]}

Yamnahakki, A ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE, DEPT MATH, PHB ECUBLENS, CH-1015 LAUSANNE, SWITZERLAND

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 05期

关键词：

D O I：

10.1016/0038-1101(95)00149-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model for space-charge limited electron transport in an N+-N-N+ device and a Schottky diode is proposed. It is based on the smallness of the lattice temperature with respect to the applied voltage. This model, derived from the stationary Boltzmann equation of semiconductors, has a much lower computational cost and leads to a good prediction for the I-V curve as well as for the built-in potential.

引用

页码：737 / 744

页数：8

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