XPS and raman investigations of nitrogen ion etching for depth profiling of CuInSe2 and CuGaSe2

被引：24

作者：

Otte, K ^{[1
]}

Lippold, G ^{[1
]}

Hirsch, D ^{[1
]}

Schindler, A ^{[1
]}

Bigl, F ^{[1
]}

机构：

[1] Inst Surface Modificat, Ion Beam Tech, D-04313 Leipzig, Germany

来源：

THIN SOLID FILMS | 2000年 / 361卷

关键词：

nitrogen; argon; ion beam etching; Cu(In; Ga)Se-2; Raman; X-ray photoelectron spectroscopy;

D O I：

10.1016/S0040-6090(99)00803-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of low energy nitrogen and argon ion beam etching on the surface of CuInSe2 single crystals and CuGaSe2 thin films was investigated by (XPS) X-ray photoelectron spectroscopy and Raman measurements. After the removal of the oxidized and contaminated layer the ion-etched surface exhibits an enrichment of In(CuInSe2) or Gn(CuGaSe2). The argon etching results in metallic In(Ga) at the surface due to preferential sputtering. In contrast, the formation of a thin protective InN(GaN) layer on the top of the us-grown material has been observed after reactive nitrogen etching. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：498 / 503

页数：6

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