A chemical method for the deposition of Bi2S3 thin films from a non-aqueous bath

被引：58

作者：

Mane, RS ^{[1
]}

Sankapal, BR ^{[1
]}

Lokhande, CD ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

来源：

THIN SOLID FILMS | 2000年 / 359卷 / 02期

关键词：

thin films; optical properties; electrical properties;

D O I：

10.1016/S0040-6090(99)00532-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A room temperature chemical method is developed to deposit semiconducting bismuth trisulphide thin films on glass substrates, The method is based on a non-aqueous bath containing bismuth nitrate and thioacetamide. The deposited films are characterized by X-ray diffraction, optical absorption, electrical resistivity and LR spectroscopy techniques. The effect of annealing on the structural, optical and electrical properties is studied. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：136 / 140

页数：5

共 17 条

[1]

*ASTM, 60333 ASTM

[2]

DESAI JD, 1993, INDIAN J PURE AP PHY, V31, P152

[3]

DESAI JD, 1994, INDIAN J PURE AP PHY, V32, P964

[4] NONAQUEOUS CHEMICAL BATH DEPOSITION OF BI2S3 THIN-FILMS [J].

DESAI, JD ;

LOKHANDE, CD .

MATERIALS CHEMISTRY AND PHYSICS, 1993, 34 (3-4) :313-316

[5] CHEMICAL-DEPOSITION OF BI2S3 THIN-FILMS FROM THIOACETAMIDE BATH [J].

DESAI, JD ;

LOKHANDE, CD .

MATERIALS CHEMISTRY AND PHYSICS, 1995, 41 (02) :98-103

[6]

HODES G, 1987, PHYS REV B, V36, P4214

[7] GROWTH-KINETICS AND POLYMORPHISM OF CHEMICALLY DEPOSITED CDS FILMS [J].

KAUR, I ;

PANDYA, DK ;

CHOPRA, KL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) :943-948

[8]

KILLEDAR VV, 1996, THIN SOLID FILMS, V289, P4

[9] MOS2-XOX SOLID-SOLUTIONS IN THIN-FILMS PRODUCED BY RF-SPUTTER-DEPOSITION [J].

LINCE, JR .

JOURNAL OF MATERIALS RESEARCH, 1990, 5 (01) :218-222

[10] CHEMICAL-DEPOSITION OF METAL CHALCOGENIDE THIN-FILMS [J].

LOKHANDE, CD .

MATERIALS CHEMISTRY AND PHYSICS, 1991, 27 (01) :1-43

← 1 2 →