A tunable RF MEMS inductor on silicon incorporating an amorphous silicon bimorph in a low-temperature process

被引：48

作者：

Chang, Stella ^{[1
]}

Sivoththaman, Siva ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 11期

关键词：

inductors; microelectromechanical devices; microwave devices; Q factor; silicon (Si); tunable circuits and devices;

D O I：

10.1109/LED.2006.884712

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel tunable radio frequency microelectro-mechanical system inductor based on the bimorph effect of an amorphous silicon (a-Si) and aluminum structural layer is presented. The outer turns of the inductor have a vertical height of 450 mu m when no voltage is applied. A 32% tuning range with high inductance (5.6-8.2 nH) is achieved by the application of a I voltage, with the structure completely flattening at 2 V. With no actuation, the peak quality factor is 15, and the self-resonance frequency is 7 GHz. The fact that the device is fabricated on Si in a low-temperature (150 degrees C process enhances the potential for system integration.

引用

页码：905 / 907

页数：3

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