Electron spectrum of a semiconductor quantum dot influenced by an interface

被引:13
作者
Braginsky, LS [1 ]
机构
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
关键词
D O I
10.1103/PhysRevB.60.R13970
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The generalized boundary conditions for the envelope wave function that take into account the real structure of an interface were used to investigate the hole spectrum of the semiconductor quantum dot embedded in an insulator matrix. An essential influence of the interface levels on the hole spectrum has been demonstrated. Such levels could exist at the top of the valuence band. It is found that boundary conditions usually applied, wherein all components of the envelope wave function vanish at the interface, can be used only in the absence of the interface levels close to the band edge. [S0163-1829(99)51644-5].
引用
收藏
页码:R13970 / R13973
页数:4
相关论文
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