Light absorption at a semiconductor interface

被引：9

作者：

Braginsky, LS ^{[1
]}

机构：

[1] ETH Zentrum, Crystallog Lab, CH-8092 Zurich, Switzerland

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.57.R6870

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Light absorption at an indirect-band-gap semiconductor interface is investigated. It is shown that the possibility of nonconservation of electron momentum at the interface significantly enhances absorption in crystallites, which are as small as 30-50 Angstrom. The essential influence of the interface levels as well as the intervalley electron conversion at the interface on the absorption has been demonstrated.

引用

页码：R6870 / R6873

页数：4

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