Electronic g factor in biased quantum wells

被引：88

作者：

Ivchenko, EL

Kiselev, AA

Willander, M

机构：

[1] UNIV GOTHENBURG,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN

[2] CHALMERS UNIV TECHNOL,S-41296 GOTHENBURG,SWEDEN

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 102卷 / 05期

关键词：

semiconductors; quantum wells; electronic band structure; spin-orbit effects;

D O I：

10.1016/S0038-1098(97)00009-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A theory of the Zeeman splitting of electronic spin states in biased quantum-well structures has been developed. The g factor tensor has been calculated as a function of the applied electric field and the well width. The longitudinal g factor has been shown to be more sensitive to the field than the transverse, or in-plane, component. For a fixed electric field and increasing the well width, the g factor components saturate towards the corresponding values for a single heterojunction. The theoretical results has been compared with available experimental data. (C) 1997 Published by Elsevier Science Ltd.

引用

页码：375 / 378

页数：4

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