CONDUCTION-BAND SPIN SPLITTING OF TYPE-I GAXIN1-XAS INP QUANTUM-WELLS

被引:42
作者
KOWALSKI, B
OMLING, P
MEYER, BK
HOFMANN, DM
WETZEL, C
HARLE, V
SCHOLZ, F
SOBKOWICZ, P
机构
[1] TECH UNIV MUNICH,DEPT PHYS E16,D-85747 GARCHING,GERMANY
[2] UNIV STUTTGART,INST PHYS 4,D-70569 STUTTGART,GERMANY
[3] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 20期
关键词
D O I
10.1103/PhysRevB.49.14786
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The spin-splitting factor g* of the electrons at the very bottom of the conduction band in strained GaxIn1-xAs/InP type-I quantum wells is reported. Experimental proof of quantum confinement-dependent anisotropy of g* is given. Changing the alloy composition at fixed quantization, equivalent to introducing compressive and tensile strain, changes g*. The values of g* perpendicular to the quantum-well plane can be explained in a model calculation. Apparently however, no quantitative theory on which to base the calculation of the anisotropic spin splitting is at present available.
引用
收藏
页码:14786 / 14789
页数:4
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