DETECTION OF MAGNETIC-RESONANCE ON PHOTOLUMINESCENCE FROM A SI/SI1-XGEX STRAINED-LAYER SUPERLATTICE

被引:45
作者
GLASER, E [1 ]
TROMBETTA, JM [1 ]
KENNEDY, TA [1 ]
PROKES, SM [1 ]
GLEMBOCKI, OJ [1 ]
WANG, KL [1 ]
CHERN, CH [1 ]
机构
[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,DEVICE RES LAB,LOS ANGELES,CA 90024
关键词
D O I
10.1103/PhysRevLett.65.1247
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Optically detected magnetic resonance has been employed for the first time on photoluminescence from a Si/Si1-xGex strained-layer superlattice. Emission bands occur at 0.87 and 0.8 eV. One of the resonances is anisotropic with g?=4.460.05 and g<0.4 and is assigned to holes of the Jz=3/2 valence band in the SiGe layers. This result demonstrates that at least part of the emission must originate from the superlattice region of these structures. © 1990 The American Physical Society.
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页码:1247 / 1250
页数:4
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