TRANSPORT AND PERSISTENT PHOTOCONDUCTIVITY IN INGAAS/INP SINGLE QUANTUM-WELLS

[1] HIGH-QUALITY EPITAXIAL INDIUM-PHOSPHIDE AND INDIUM ALLOYS GROWN USING TRIMETHYLINDIUM AND PHOSPHINE IN AN ATMOSPHERIC-PRESSURE REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 311 - 318

[2] SELF-CONSISTENT CALCULATIONS OF CHARGE-TRANSFER AND ALLOY SCATTERING-LIMITED MOBILITY IN INP-GA1-XINXASYP1-Y SINGLE QUANTUM WELLS [J]. SOLID STATE COMMUNICATIONS, 1985, 53 (08) : 727 - 730

[3] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[4] TRANSPORT-PROPERTIES AND PERSISTENT PHOTOCONDUCTIVITY IN INP/IN0.53GA0.47AS MODULATION-DOPED HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 657 - 664

[5] PARALLEL CONDUCTION IN GAAS/ALXGA1-XAS MODULATION DOPED HETEROJUNCTIONS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (29): : 5629 - 5636

[6] STUDY OF PERSISTENT PHOTOCONDUCTIVITY EFFECT IN N-TYPE SELECTIVELY DOPED ALGAAS/GAAS HETEROJUNCTION [J]. SOLID STATE COMMUNICATIONS, 1984, 51 (05) : 317 - 322

[7] HIGH MAGNETIC-FIELD STUDIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GALNAS-INP SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 293 - 295

[8] RAZEGHI M, 1984, SPRINGER SERIES SOLI, V53, P100

[9] OPTICAL-PROPERTIES OF INGAAS-INP SINGLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1455 - 1457

[10] TWO-DIMENSIONAL ELECTRON-GAS IN A SELECTIVELY DOPED INP/IN0.53GA0.47AS HETEROSTRUCTURE GROWN BY CHLORIDE TRANSPORT VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 280 - 282

[1] HIGH-QUALITY EPITAXIAL INDIUM-PHOSPHIDE AND INDIUM ALLOYS GROWN USING TRIMETHYLINDIUM AND PHOSPHINE IN AN ATMOSPHERIC-PRESSURE REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 311 - 318

[2] SELF-CONSISTENT CALCULATIONS OF CHARGE-TRANSFER AND ALLOY SCATTERING-LIMITED MOBILITY IN INP-GA1-XINXASYP1-Y SINGLE QUANTUM WELLS [J]. SOLID STATE COMMUNICATIONS, 1985, 53 (08) : 727 - 730

[3] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[4] TRANSPORT-PROPERTIES AND PERSISTENT PHOTOCONDUCTIVITY IN INP/IN0.53GA0.47AS MODULATION-DOPED HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 657 - 664

[5] PARALLEL CONDUCTION IN GAAS/ALXGA1-XAS MODULATION DOPED HETEROJUNCTIONS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (29): : 5629 - 5636

[6] STUDY OF PERSISTENT PHOTOCONDUCTIVITY EFFECT IN N-TYPE SELECTIVELY DOPED ALGAAS/GAAS HETEROJUNCTION [J]. SOLID STATE COMMUNICATIONS, 1984, 51 (05) : 317 - 322

[7] HIGH MAGNETIC-FIELD STUDIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GALNAS-INP SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 293 - 295

[8] RAZEGHI M, 1984, SPRINGER SERIES SOLI, V53, P100

[9] OPTICAL-PROPERTIES OF INGAAS-INP SINGLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1455 - 1457

[10] TWO-DIMENSIONAL ELECTRON-GAS IN A SELECTIVELY DOPED INP/IN0.53GA0.47AS HETEROSTRUCTURE GROWN BY CHLORIDE TRANSPORT VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 280 - 282