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Substrate-induced pairing of Si ad-dimers on the Si(100) surface

被引：3
作者：
Braun, OM
Valkering, TP
vanOpheusden, JHJ
Zandvliet, HJW
机构：
[1] UNIV TWENTE,FAC APPL PHYS,NL-7500 AE ENSCHEDE,NETHERLANDS
[2] UKRAINIAN ACAD SCI,INST PHYS,UA-252022 KIEV,UKRAINE
[3] AGR UNIV WAGENINGEN,DEPT AGR ENGN & PHYS,NL-6703 HD WAGENINGEN,NETHERLANDS
来源：
SURFACE SCIENCE | 1997年 / 384卷 / 1-3期
关键词：
surface diffusion; surface structure; vicinal single crystal surfaces;
D O I：
10.1016/S0039-6028(97)00181-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The interaction between Si ad-dimers on the Si(100) surface has been studied by total-energy calculations with a three-particle Stillinger-Weber potential. We have found a strong attractive interaction between neighboring Si ad-dimers located in neighboring on-top and deep-channel positions in adjacent substrate dimer rows. This should result in a four-atomic block consisting of two dimers as an important elementary object of the Si(100) kinetics. (C) 1997 Elsevier Science B.V.
引用
收藏
页码：129 / 135
页数：7
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