Low-temperature crystallization and ferroelectric properties of sol-gel derived layer-structured perovskite thin films

被引：15

作者：

Kato, K ^{[1
]}

Finder, JM ^{[1
]}

Dey, SK ^{[1
]}

Torii, Y ^{[1
]}

机构：

[1] NATL IND RES INST NAGOYA,KITA KU,NAGOYA,AICHI 462,JAPAN

来源：

INTEGRATED FERROELECTRICS | 1997年 / 18卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

SrBi2Ta2O9-SrBi2Nb2O9; sol-gel processing; stoichiometric composition; preferred orientation; hysteresis loops; fatigue properties;

D O I：

10.1080/10584589708221702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The sol-gel derived SBT thin films crystallized, by rapid thermal annealing in an oxygen atmosphere below 550 degrees C, and exhibited preferred (115) orientation. The crystalline perfection improved and the crystallite size increased with temperature up to 700 degrees C. In the case of SBN thin films, a low heating rate of 2 degrees C/min, was necessary for the control of the crystallographic (115) orientation, whereas a rate of 200 degrees C/s (rapid thermal annealing) exhibited a c-axis orientation. The (115) SET thin film, heated to 700 degrees C, exhibited improved ferroelectric properties.

引用

页码：237 / 247

页数：11

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