Formation and migration energies of interstitials in silicon under strain conditions

Simulation calculations are conducted for Si substrates to analyze the formation and diffusion energies of interstitials under strain condition using statics methods based on a Stillinger-Weber-type potential function. Defects in the vicinity of the surface region and in the bulk are examined, and the role played by compressive and tensile strains on the energetics of interstitials is investigated. The results indicate that strain alters defect energetics, which, in turn, modifies their diffusion characteristics. (C) 1999 Elsevier Science B.V. All rights reserved.