Optical switching of single-electron tunneling in SiO2/molecule/SiO2 multilayer on Si(100)

被引:20
作者
Wakayama, Y
Ogawa, K
Kubota, T
Suzuki, H
Kamikado, T
Mashiko, S
机构
[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan
[2] Natl Inst Mat Sci, Mat Anal Stn, Tsukuba, Ibaraki 3050047, Japan
[3] Natl Inst Informat & Commun Technol, Kansai Adv Res Ctr, Nishi Ku, Kobe, Hyogo 6512492, Japan
关键词
D O I
10.1063/1.1772867
中图分类号
O59 [应用物理学];
学科分类号
摘要
Porphyrin-based molecules inserted into the oxide layer of a metal-oxide-semiconductor structure served as Coulomb islands. A Coulomb staircase originating from the single-electron tunneling was observed in a current-voltage curve. We found that light irradiation induced a shift in the Coulomb staircase. This shift was reversible; the shifted Coulomb staircase returned to its original position when the light irradiation was turned off. We thus demonstrated optical switching of a tunneling current. This result indicates that the molecular Coulomb islands have the potential to provide a range of optical functionality in single-electron tunneling devices. (C) 2004 American Institute of Physics.
引用
收藏
页码:329 / 331
页数:3
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