Ultrafast charge generation in a semiconducting polymer studied with THz emission spectroscopy

被引:30
作者
Hendry, E
Koeberg, M
Schins, JM
Siebbeles, LDA
Bonn, M
机构
[1] Leiden Univ, Leiden Inst Chem, NL-2300 RA Leiden, Netherlands
[2] Delft Univ Technol, Interfac Reactor Inst, NL-2629 JB Delft, Netherlands
[3] FOM, Inst Atom & Mol Phys, NL-1098 SJ Amsterdam, Netherlands
关键词
D O I
10.1103/PhysRevB.70.033202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the ultrafast charge generation in a semiconducting polymer (MEH-PPV) by measuring the radiated THz field after photoexciting the biased polymer with a femtosecond visible pulse. The subpicosecond temporal characteristics of the emitted wave reflects the ultrafast photoconductivity dynamics and sets an upper limit for charge generation of 200 fs following photoexcitation, and reveals the dispersive nature of charge transport in MEH-PPV. A comparison of the fields radiated from MEH-PPV and the well-characterized model semiconductor system (GaAs) allows for an accurate estimate of the quantum efficiency for charge generation in the polymer, found to be less than 1%. Both observations are consistent with ultrafast charge generation in semiconducting polymers through hot exciton dissociation.
引用
收藏
页码:033202 / 1
页数:4
相关论文
共 33 条
[1]   Conducting polymers in microelectronics [J].
Angelopoulos, M .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2001, 45 (01) :57-75
[2]   Hot exciton dissociation in a conjugated polymer [J].
Arkhipov, VI ;
Emelianova, EV ;
Bässler, H .
PHYSICAL REVIEW LETTERS, 1999, 82 (06) :1321-1324
[3]   Distortion of terahertz pulses in electro-optic sampling [J].
Bakker, HJ ;
Cho, GC ;
Kurz, H ;
Wu, Q ;
Zhang, XC .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1998, 15 (06) :1795-1801
[4]  
BASCO DM, 2002, PHYS REV B, V66, P5210
[5]   Terahertz spectroscopy [J].
Beard, MC ;
Turner, GM ;
Schmuttenmaer, CA .
JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (29) :7146-7159
[6]   Ultraslow vacancy-mediated tracer diffusion in two dimensions:: The Einstein relation verified -: art. no. 031101 [J].
Bénichou, O ;
Oshanin, G .
PHYSICAL REVIEW E, 2002, 66 (03)
[7]   Second-harmonic generation in GaAs:: Experiment versus theoretical predictions of χxyz(2) -: art. no. 036801 [J].
Bergfeld, S ;
Daum, W .
PHYSICAL REVIEW LETTERS, 2003, 90 (03) :4
[8]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[9]   The Schottky energy barrier dependence of charge injection in organic light-emitting diodes [J].
Campbell, IH ;
Davids, PS ;
Smith, DL ;
Barashkov, NN ;
Ferraris, JP .
APPLIED PHYSICS LETTERS, 1998, 72 (15) :1863-1865
[10]   Factors influencing stimulated emission from poly(p-phenylenevinylene) [J].
Denton, GJ ;
Tessler, N ;
Harrison, NT ;
Friend, RH .
PHYSICAL REVIEW LETTERS, 1997, 78 (04) :733-736