Second-harmonic generation in GaAs:: Experiment versus theoretical predictions of χxyz(2) -: art. no. 036801

被引：129

作者：

Bergfeld, S ^{[1
]}

Daum, W ^{[1
]}

机构：

[1] Forschungszentrum Julich, ISG 3, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.90.036801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

For GaAs we have determined \chi(xyz)((2))(-2omega; omega, omega)\ in second-harmonic generation experiments using two-photon energies between 2 and 5 eV. In addition to the E-1, E-1 + Delta(1), E-0', and E-2 critical-point bulk transitions of GaAs, a surprisingly strong surface transition at 3.35 eV was observed for natively oxidized GaAs(001) samples. A detailed comparison with theoretical predictions reveals that calculations that include many-particle effects at the level of the "scissors" approximation can describe the overall frequency dependence of the second-harmonic susceptibility reasonably well.

引用

页数：4

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