X-ray spectroscopic study of the electronic structure of CuCrO2

被引:98
作者
Arnold, T. [1 ]
Payne, D. J. [1 ]
Bourlange, A. [1 ]
Hu, J. P. [1 ]
Egdell, R. G. [1 ]
Piper, L. F. J. [2 ]
Colakerol, L. [2 ]
De Masi, A. [2 ]
Glans, P. -A. [2 ]
Learmonth, T. [2 ]
Smith, K. E. [2 ]
Guo, J. [3 ]
Scanlon, D. O. [4 ]
Walsh, A. [4 ]
Morgan, B. J. [4 ]
Watson, G. W. [4 ]
机构
[1] Univ Oxford, Inorgan Chem Lab, Dept Chem, Oxford OX1 3QR, England
[2] Boston Univ, Dept Phys, Boston, MA 02215 USA
[3] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
[4] Trinity Coll Dublin, Sch Chem, Dublin 2, Ireland
基金
英国工程与自然科学研究理事会; 爱尔兰科学基金会;
关键词
copper compounds; density functional theory; Fermi level; magnesium; semiconductor doping; semiconductor materials; valence bands; X-ray absorption spectra; X-ray emission spectra; X-ray photoelectron spectra; THIN-FILMS; OPTOELECTRONIC PROPERTIES; ELECTRICAL-CONDUCTION; CRYSTAL-STRUCTURE; TRANSPARENT; PHOTOEMISSION; SPECTRA; DESIGN; OXIDE; MODULATION;
D O I
10.1103/PhysRevB.79.075102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of the p-type transparent conducting oxide CuCrO2 has been studied by x-ray photoemission, x-ray absorption, and x-ray emission spectroscopies. The upper part of the valence band derives mainly from Cu 3d and Cr 3d states while the lower valence-band states are of dominant O 2p atomic character, but with pronounced mutual hybridization among Cu 3d, Cr 3d, and O 2p states. Site specific electronic excitations have been studied by resonant inelastic x-ray scattering at the Cu L and Cr L edges. Inelastic loss at the Cu L edge is dominated by on-site interband excitations similar to those found in Cu2O, while at the Cr L edge localized excitations arising from ligand field splitting of the Cr 3d levels are observed. Mg doping on the Cr sites in CuCrO2 is shown to lead to a pronounced shift in the Fermi level toward the edge of the valence band. The experimental data are compared to electronic structure calculations on CuCrO2 carried out using density-functional methods corrected for onsite Coulomb repulsion.
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页数:9
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