共 52 条
X-ray spectroscopic study of the electronic structure of CuCrO2
被引:98
作者:
Arnold, T.
[1
]
Payne, D. J.
[1
]
Bourlange, A.
[1
]
Hu, J. P.
[1
]
Egdell, R. G.
[1
]
Piper, L. F. J.
[2
]
Colakerol, L.
[2
]
De Masi, A.
[2
]
Glans, P. -A.
[2
]
Learmonth, T.
[2
]
Smith, K. E.
[2
]
Guo, J.
[3
]
Scanlon, D. O.
[4
]
Walsh, A.
[4
]
Morgan, B. J.
[4
]
Watson, G. W.
[4
]
机构:
[1] Univ Oxford, Inorgan Chem Lab, Dept Chem, Oxford OX1 3QR, England
[2] Boston Univ, Dept Phys, Boston, MA 02215 USA
[3] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
[4] Trinity Coll Dublin, Sch Chem, Dublin 2, Ireland
基金:
英国工程与自然科学研究理事会;
爱尔兰科学基金会;
关键词:
copper compounds;
density functional theory;
Fermi level;
magnesium;
semiconductor doping;
semiconductor materials;
valence bands;
X-ray absorption spectra;
X-ray emission spectra;
X-ray photoelectron spectra;
THIN-FILMS;
OPTOELECTRONIC PROPERTIES;
ELECTRICAL-CONDUCTION;
CRYSTAL-STRUCTURE;
TRANSPARENT;
PHOTOEMISSION;
SPECTRA;
DESIGN;
OXIDE;
MODULATION;
D O I:
10.1103/PhysRevB.79.075102
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The electronic structure of the p-type transparent conducting oxide CuCrO2 has been studied by x-ray photoemission, x-ray absorption, and x-ray emission spectroscopies. The upper part of the valence band derives mainly from Cu 3d and Cr 3d states while the lower valence-band states are of dominant O 2p atomic character, but with pronounced mutual hybridization among Cu 3d, Cr 3d, and O 2p states. Site specific electronic excitations have been studied by resonant inelastic x-ray scattering at the Cu L and Cr L edges. Inelastic loss at the Cu L edge is dominated by on-site interband excitations similar to those found in Cu2O, while at the Cr L edge localized excitations arising from ligand field splitting of the Cr 3d levels are observed. Mg doping on the Cr sites in CuCrO2 is shown to lead to a pronounced shift in the Fermi level toward the edge of the valence band. The experimental data are compared to electronic structure calculations on CuCrO2 carried out using density-functional methods corrected for onsite Coulomb repulsion.
引用
收藏
页数:9
相关论文