The structural and electrical property of CuCr1-xNixO2 delafossite compounds

被引：64

作者：

Zheng, S. Y. ^{[1
]}

Jiang, G. S. ^{[1
]}

Su, J. R. ^{[1
]}

Zhu, C. F. ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Mat Sci & Engn, Lab Adv Funct Mat & Devices, Hefei 230026, Peoples R China

来源：

MATERIALS LETTERS | 2006年 / 60卷 / 29-30期

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

transparent conducting oxides; Raman spectroscopy; electrical property; transport mechanism; X-ray photoelectron spectroscopy; Seekbeck coefficient;

D O I：

10.1016/j.matlet.2006.03.132

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A series of CuCr1-xNixO2 (0 <= x <= 0.06) polycrystalline samples was prepared. The electrical conductivity was measured in the temperature range of 160-300 K. It was found that the electrical conductivity (or) increases rapidly with the doping of Ni2+ ions. At room temperature, the sigma is 0.047 S cm(-1) for the sample with x=0.06, which is two orders of magnitude larger than that of the CuCrO2 sample (9.49E-4 S cm(-1)). The Seebeck coefficients are positive for all samples, which indicate p-type conducting of the samples. The experimental results imply that it is possible to get higher electrical conductivity p-type transparent conducting oxides (TCO) from CuMO2 by doping with divalent ions. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：3871 / 3873

页数：3

共 12 条

[1] PREPARATION AND OPTOELECTRONIC PROPERTIES OF SEMICONDUCTING CUCRO2 [J].