Optical and electrical properties of Co-doped epitaxial ZnO films

被引：34

作者：

Jin, ZW

Fukumura, T

Hasegawa, K

Yoo, YZ

Ando, K

Sekiguchi, T

Ahmet, P

Chikyow, T

Hasegawa, T

Koinuma, H

Kawasaki, M

机构：

[1] Natl Inst Mat Sci, Nanomat Lab, Nano Device Res Grp, Tsukuba, Ibaraki 3050047, Japan

[2] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[4] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[5] Tokyo Inst Technol, COMET, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[6] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[7] Japan Sci & Technol Corp, CREST, Tokyo 1690072, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷

基金：

日本学术振兴会;

关键词：

molecular beam epitaxy; zinc compounds; magneto-optic materials;

D O I：

10.1016/S0022-0248(01)01976-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial ZnO films doped with Co were fabricated by the high throughput combinatorial laser molecular-beam epitaxy method. The solubility limit of Co in ZnO was determined. Transmission and cathodoluminescence spectra were measured to study the electronic structures of Co in Zn1-xCoxO films. Magnetoresistance behavior was measured for a selected sample co-doped with I mol% of Al to investigate s-d exchange interaction between the conducting s electron spins and the d electron spins localized at Co impurity. Huge magneto-optical effects comparable with that of Cd1-xMnxTe were observed on Zn1-xCoxO films. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：548 / 552

页数：5

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