Study of the spontaneous alignment of InAs quantum dots along the surface steps as a function of the InAs coverage

被引：2

作者：

da Silva, MJ

Quivy, AA

González-Borrero, PP

Marega, E

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, SP, Brazil

[2] Univ Sao Paulo, Inst Fis & Quim, BR-13560970 Sao Carlos, SP, Brazil

来源：

THIN SOLID FILMS | 2002年 / 410卷 / 1-2期

基金：

巴西圣保罗研究基金会;

关键词：

molecular beam epitaxy (MBE); atomic force microscopy (AFM); indium arsenide; nanostructures;

D O I：

10.1016/S0040-6090(02)00256-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The evolution of InAs quantum dots (QDs) deposited on GaAs (001) was investigated in a continuous and unambiguous way as a function of the InAs coverage. Taking advantage of the intrinsic non-uniformity of the In flux in the molecular beam epitaxy system. a single sample was grown where the amount of InAs material varied in a monotonic way along the sample area. High-quality atomic force microscopy (AFM) images showed a saturation of the number of QDs nucleated out of the surface steps as the system evolved and confirmed that QDs can be effectively aligned along the surface steps up to the highest densities, which is an important subject for device application. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：188 / 193

页数：6

共 10 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].