Integration of SiCN as a low κ etch stop and Cu passivation in a high performance Cu/low κ interconnect

被引:21
作者
Martin, J [1 ]
Stephens, T [1 ]
Huang, F [1 ]
Aminpur, M [1 ]
Mueller, J [1 ]
Martin, J [1 ]
Demircan, E [1 ]
Zhao, L [1 ]
Werking, J [1 ]
Goldberg, C [1 ]
Park, S [1 ]
Sparks, T [1 ]
Esber, C [1 ]
Filipiak, S [1 ]
机构
[1] Motorola Inc, Adv Micro Dev, AMD Alliance, Austin, TX 78721 USA
来源
PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年
关键词
D O I
10.1109/IITC.2002.1014881
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the integration of a silicon carbon nitride (SiCN) copper passivation and etch stop layer into a Cu low k dielectric interconnect technology. The incorporation of SiCN improves interconnect performance by virtue of its lower dielectric constant as compared to silicon nitride, and through changes to the process integration made possible by the improved etch selectivity and good copper interface properties.
引用
收藏
页码:42 / 44
页数:3
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