Nondestructive electroluminescence characterization of as-grown semiconductor optoelectronic device structures using indium-tin-oxide coated electrodes

被引：9

作者：

Ghosh, S ^{[1
]}

Hosea, TJC ^{[1
]}

机构：

[1] Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2000年 / 71卷 / 04期

关键词：

D O I：

10.1063/1.1150550

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We describe an arrangement for nondestructive electroluminescence measurements to characterize as-grown semiconductor optoelectronic device structures using indium-tin-oxide film coated on glass as a separate transparent electrode. The usefulness of this technique, and its applicability over a range of temperatures, are demonstrated by measurements on pieces of bare as-grown wafers of two different laser structures. (C) 2000 American Institute of Physics. [S0034-6748(00)01604-X].

引用

页码：1911 / 1912

页数：2