ABSORPTION, EMISSION, AND GAIN SPECTRA OF 1.3-MU-M INGAASP QUATERNARY LASERS

被引:39
作者
HENRY, CH
LOGAN, RA
TEMKIN, H
MERRITT, FR
机构
关键词
D O I
10.1109/JQE.1983.1071955
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:941 / 946
页数:6
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共 17 条
[1]   OSCILLATORY MAGNETO-TRANSMISSION OF IN1-XGAXASYP1-Y ALLOYS [J].
ALAVI, K ;
AGGARWAL, RL ;
GROVES, SH .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1979, 11 (1-3) :136-138
[2]   SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES [J].
ASBECK, P .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :820-822
[3]   THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J].
DUTTA, NK ;
NELSON, RJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :74-92
[4]  
Einstein A, 1917, PHYS Z, V18, P121
[5]   INFLUENCE OF HOT CARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD IN 1.3-MU-M INGAASP LASERS [J].
ETIENNE, B ;
SHAH, J ;
LEHENY, RF ;
NAHORY, RE .
APPLIED PHYSICS LETTERS, 1982, 41 (11) :1018-1020
[6]  
GLOVER GH, 1972, APPL PHYS LETT, V21, P409, DOI 10.1063/1.1654433
[7]   MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS [J].
HENRY, CH ;
LOGAN, RA ;
MERRITT, FR .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3042-3050
[8]   THE EFFECT OF INTERVALENCE BAND ABSORPTION ON THE THERMAL-BEHAVIOR OF INGAASP LASERS [J].
HENRY, CH ;
LOGAN, RA ;
MERRITT, FR ;
LUONGO, JP .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :947-952
[9]  
HENRY CH, 1983, IEEE J QUANTUM ELECT, V19, P905, DOI 10.1109/JQE.1983.1071997
[10]   MEASUREMENT OF SPECTRUM, BIAS DEPENDENCE, AND INTENSITY OF SPONTANEOUS EMISSION IN GAAS-LASERS [J].
HENRY, CH ;
LOGAN, RA ;
BERTNESS, KA .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4453-4456