Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition

被引：20

作者：

Potter, RJ ^{[1
]}

Marshall, PA

Chalker, PR

Taylor, S

Jones, AC

Noakes, TCQ

Bailey, P

机构：

[1] Univ Liverpool, Liverpool L69 3GH, Merseyside, England

[2] Univ Liverpool, Liverpool L69 3GJ, Merseyside, England

[3] Univ Liverpool, Chem & Surface Sci Res Ctr, Liverpool L69 3BX, Merseyside, England

[4] CCLRC Daresbury Lab, Warrington, Cheshire, England

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 20期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1755424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of hafnium aluminate, with varying aluminum content, have been deposited by liquid injection metalorganic chemical vapor deposition using the metal alkoxide precursors hafnium methyl-methoxy-propanolate and aluminum iso-propoxide. X-ray diffraction analysis showed that the films were amorphous at aluminum concentrations above 7 at. %. Postdeposition annealing indicated that the oxide-transition temperature from amorphous to crystalline increased with aluminum content. Medium-energy ion scattering showed that up to 900 degreesC, internal oxidation of the silicon substrate had been inhibited. The capacitance-voltage characteristics of the films significantly improved following annealing in dry air. (C) 2004 American Institute of Physics.

引用

页码：4119 / 4121

页数：3

共 22 条

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J].

ABOAF, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :948-&

[2] A medium energy ion scattering study of the structure of Sb overlayers on Cu(111) [J].

Bailey, P ;

Noakes, TCQ ;

Woodruff, DP .

SURFACE SCIENCE, 1999, 426 (03) :358-372

[3] MOSFET transistors fabricated with high permitivity TiO2 dielectrics [J].

Campbell, SA ;

Gilmer, DC ;

Wang, XC ;

Hsieh, MT ;

Kim, HS ;

Gladfelter, WL ;

Yan, JH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (01) :104-109

[4]

CHALKER PR, IN RPESS J MAT SCI

[5] Dielectric characteristics of Al2O3-HfO2 nanolaminates on Si(100) [J].

Cho, MH ;

Roh, YS ;

Whang, CN ;

Jeong, K ;

Choi, HJ ;

Nam, SW ;

Ko, DH ;

Lee, JH ;

Lee, NI ;

Fujihara, K .

APPLIED PHYSICS LETTERS, 2002, 81 (06) :1071-1073

[6]

CLARKPHELPS RB, 2001, MAT RES SOC S P, V670

[7] Structure and stability of ultrathin zirconium oxide layers on Si(001) [J].

Copel, M ;

Gribelyuk, M ;

Gusev, E .

APPLIED PHYSICS LETTERS, 2000, 76 (04) :436-438

[8] Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition [J].

Ho, MY ;

Gong, H ;

Wilk, GD ;

Busch, BW ;

Green, ML ;

Lin, WH ;

See, A ;

Lahiri, SK ;

Loomans, ME ;

Räisänen, PI ;

Gustafsson, T .

APPLIED PHYSICS LETTERS, 2002, 81 (22) :4218-4220

[9]

KIM YS, 2003, ADV PROGR 204 M EL S

[10] Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100) [J].

Klein, TM ;

Niu, D ;

Epling, WS ;

Li, W ;

Maher, DM ;

Hobbs, CC ;

Hegde, RI ;

Baumvol, IJR ;

Parsons, GN .

APPLIED PHYSICS LETTERS, 1999, 75 (25) :4001-4003

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