Current assisted magnetization switching in (Ga,Mn)As nanodevices

被引：6

作者：

Gould, C ^{[1
]}

Pappert, K ^{[1
]}

Rüster, C ^{[1
]}

Giraud, R ^{[1
]}

Borzenko, T ^{[1
]}

Schott, GM ^{[1
]}

Brunner, K ^{[1
]}

Schmidt, G ^{[1
]}

Molenkamp, LW ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Phys EP3, D-97074 Wurzburg, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 5A期

关键词：

(Ga; Mn)As; current induced switching; nanoconstriction; spintronics; domain wall; ferromagnetic semiconductor;

D O I：

10.1143/JJAP.45.3860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries. Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual realization of spintronic devices which make use of domain walls to store, transport, and manipulate information.

引用

页码：3860 / 3862

页数：3

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