Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallization

被引:108
作者
Liu, CY [1 ]
Tu, KN
Sheng, TT
Tung, CH
Frear, DR
Elenius, P
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90005 USA
[2] Inst Microelect, Singapore 117685, Singapore
[3] SEMATECH, Austin, TX 78741 USA
[4] Flip Clip Technol, Phoenix, AZ 85034 USA
关键词
D O I
10.1063/1.371967
中图分类号
O59 [应用物理学];
学科分类号
摘要
The wetting reaction between molten eutectic SnPb solder and a sputtered trilayer Cu/Ni(V)/Al thin film metallization was studied using cross-sectional transmission electron microscopy and scanning electron microscopy. Reaction temperatures were from 200 to 240 degrees C and reaction times ranged from 1 to 40 min. The initial reaction products were Cu6Sn5 and Cu3Sn. The latter transforms to the former after an annealing greater than 1 min at 220 degrees C. The Cu6Sn5 grains adhere well to the Ni(V) surface and no spalling of them was observed, even after 40 min at 220 degrees C. This surprising result indicates that the Cu/Ni(V)/Al or Cu6Sn5/Ni(V)/Al is a stable thin film metallization for low temperature eutectic SnPb solder direct chip attachment to organic substrates. Additionally, Kirkendall voids accompanied Cu3Sn formation, yet the voids disappear when the Cu3Sn transforms to Cu6Sn5. (C) 2000 American Institute of Physics. [S0021-8979(99)02423-8].
引用
收藏
页码:750 / 754
页数:5
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