Doping in quantum cascade lasers.: II.: GaAs/Al0.15Ga0.85As terahertz devices

被引：27

作者：

Ajili, Lassaad ^{[1
]}

Scalari, Giacomo ^{[1
]}

Giovannini, Marcella ^{[1
]}

Hoyler, Nicolas ^{[1
]}

Faist, Jerome ^{[1
]}

机构：

[1] Univ Neuchatel, Inst Phys, ACH-2000 Neuchatel, Switzerland

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 04期

基金：

瑞士国家科学基金会;

关键词：

D O I：

10.1063/1.2234805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performances of GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers based on a bound-to-continuum transition are investigated as a function of injector doping. A linear dependence between threshold current and doping is found and agrees with the expected increase of waveguide losses due to free carrier absorption. (c) 2006 American Institute of Physics.

引用

页数：3

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