Growth modes in metal-organic molecular beam epitaxy of TiO2 on r-plane sapphire

被引：31

作者：

Jalan, Bharat ^{[1
]}

Engel-Herbert, Roman ^{[1
]}

Cagnon, Joel ^{[1
]}

Stemmer, Susanne ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2009年 / 27卷 / 02期

基金：

美国国家科学基金会;

关键词：

aluminium compounds; atomic force microscopy; chemical beam epitaxial growth; plasma materials processing; reflection high energy electron diffraction; titanium compounds; transmission electron microscopy; CHEMICAL-VAPOR-DEPOSITION; TITANIUM-DIOXIDE; FILMS; INTERFACES; CHEMISTRY; SURFACES;

D O I：

10.1116/1.3065713

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Phase pure, epitaxial (101) rutile TiO2 films were grown on (012) sapphire substrates at temperatures between 485 and 725 degrees C using metal-organic molecular beam epitaxy with titanium tetraisopropoxide as the Ti source. Growth modes and rates were investigated as a function of substrate temperature using reflection high-energy electron diffraction, x-ray reflectivity, atomic force microscopy, and transmission electron microscopy. Growth rates were as high as 125 nm/h. The influence of additional oxygen supplied from a rf plasma source was investigated. Without oxygen plasma, the growth rate exhibited reaction and flux-limited regimes and layer-by-layer growth was observed in the initial stages of film growth. With oxygen plasma the growth rate became independent of temperature; films grew initially in step-flow mode and were insulating. The mechanisms for the different growth modes as a function of film thickness, temperature, and presence of oxygen are discussed.

引用

页码：230 / 233

页数：4

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