Influence of catalytic reactivity on the response of metal-oxide-silicon carbide sensor to exhaust gases

被引:29
作者
Svenningstorp, H
Tobias, P
Lundström, I
Salomonsson, P
Mårtensson, P
Ekedahl, LG
Spetz, AL [1 ]
机构
[1] Linkoping Univ, S SENCE, S-58183 Linkoping, Sweden
[2] Linkoping Univ, Div Appl Phys, S-58183 Linkoping, Sweden
[3] AB Volvo Technol Dev, S-40508 Gothenburg, Sweden
基金
瑞典研究理事会;
关键词
HC; silicon carbide; exhaust; Schottky diode; field effect device;
D O I
10.1016/S0925-4005(99)00140-9
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Catalytic metal insulator silicon carbide, MISiC, Schottky diodes are promising devices for on board exhaust diagnosis in cars. These sensors show a direct or indirect sensitivity to gases like H-2, CO, HC (hydrocarbons) and O-2. The catalytic reactivity of the sensor will effect the gas sensing conditions. In some situations knowledge about the reactivity of the catalytic surface may give more information about the exhaust gas composition. For instance, the sensor signal normally moves to a lower voltage in an ambient containing H-2 and HC, however, under certain conditions when exposed to rich gas mixtures, the HC response is opposite the one for H-2. Measurements performed by the MISiC sensors on simulated exhaust gas mixtures, either rich or lean, are shown here. Some fundamental studies of the HC response have been performed. Reaction limitation conditions are suggested as an explanation for the response of HC opposite the one of H-2. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:159 / 165
页数:7
相关论文
共 13 条
  • [1] Chemical sensors with catalytic metal gates - Switching behavior and kinetic phase transitions
    Baranzahi, A
    Tobias, P
    Spetz, AL
    Martensson, P
    Ekedahl, LG
    Lundstrom, I
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (10) : 3401 - 3406
  • [2] Response of metal-oxide-silicon carbide sensors to simulated and real exhaust gases
    Baranzahi, A
    Spetz, AL
    Glavmo, M
    Carlsson, C
    Nytomt, J
    Salomonsson, P
    Jobson, E
    Haggendal, B
    Martensson, P
    Lundstrom, I
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1997, 43 (1-3) : 52 - 59
  • [3] BARANZAHI A, 1997, SAE TECHNICAL PAPER, P231
  • [4] Box GEP., 1978, Statistics for experimenters
  • [5] Hydrogen sensing mechanisms of metal-insulator interfaces
    Ekedahl, LG
    Eriksson, M
    Lundström, I
    [J]. ACCOUNTS OF CHEMICAL RESEARCH, 1998, 31 (05) : 249 - 256
  • [6] Hunter G.W., 1997, T TECH, V2, P1093
  • [7] LAMBDA-MEASUREMENT WITH GA2O3
    LAMPE, U
    FLEISCHER, M
    MEIXNER, H
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1994, 17 (03) : 187 - 196
  • [8] Logothetis EM., 1980, CERAM ENG SCI P, V1, P281
  • [9] HYDROGEN SENSITIVITY OF PALLADIUM-THIN-OXIDE-SILICON SCHOTTKY BARRIERS
    SHIVARAMAN, MS
    LUNDSTROM, I
    SVENSSON, C
    HAMMARSTEN, H
    [J]. ELECTRONICS LETTERS, 1976, 12 (18) : 483 - 484
  • [10] Spetz AL, 1997, PHYS STATUS SOLIDI A, V162, P493, DOI 10.1002/1521-396X(199707)162:1<493::AID-PSSA493>3.0.CO