HYDROGEN SENSITIVITY OF PALLADIUM-THIN-OXIDE-SILICON SCHOTTKY BARRIERS

被引：89

作者：

SHIVARAMAN, MS ^{[1
]}

LUNDSTROM, I ^{[1
]}

SVENSSON, C ^{[1
]}

HAMMARSTEN, H ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,RES LAB ELECTR,S-40220 GOTHENBURG 5,SWEDEN

来源：

ELECTRONICS LETTERS | 1976年 / 12卷 / 18期

关键词：

D O I：

10.1049/el:19760365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：483 / 484

页数：2

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[2] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
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[3] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY
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[4] HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR
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[7] LUNDSTROM I, TO BE PUBLISHED
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