Interfacial electrical properties of DNA-modified diamond thin films: Intrinsic response and hybridization-induced field effects

被引:126
作者
Yang, WS
Butler, JE
Russell, JN
Hamers, RJ
机构
[1] Univ Wisconsin, Dept Chem, Madison, WI 53706 USA
[2] USN, Res Lab, Div Chem, Washington, DC 20375 USA
关键词
D O I
10.1021/la036460y
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have investigated the frequency-dependent interfacial electrical properties of nanocrystalline diamond films that were covalently linked to DNA oligonucleotides and how these properties are changed upon exposure to complementary and noncomplementary DNA oligonucleotides. Frequency-dependent electrical measurements at the open-circuit potential show significant changes in impedance at frequencies of > 10(4) Hz when DNA-modified diamond films are exposed to complementary DNA, with only minimal changes when exposed to noncomplementary DNA molecules. Measurements as a function of potential show that at 10(5) Hz, the impedance is dominated by the space-charge region of the diamond film. DNA molecules hybridizing at the interface induce a field effect in the diamond space-charge layer, altering the impedance of the diamond film. By identifying a range of impedances where the impedance is dominated by the diamond space-charge layer, we show that it possible to directly observe DNA hybridization, in real time and without additional labels, via simple measurement of the interfacial impedance.
引用
收藏
页码:6778 / 6787
页数:10
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