Three-dimensional self-consistent simulation of the charging time response in silicon nanocrystal flash memories

被引：43

作者：

de Sousa, JS

Thean, AV

Leburton, JP

Freire, VN

机构：

[1] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

[2] Motorola Inc, Austin, TX 78727 USA

[3] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 10期

关键词：

D O I：

10.1063/1.1509105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A numerical model to calculate the tunneling time from the channel of a metal-oxide-semiconductor device into a silicon nanocrystal embedded in SiO2 is presented. Self-consistent simulations of the Kohn-Sham and Poisson equations are performed to study the role of the size, shape, and barrier thickness of a quantum dot (QD). We found that the charging process is very sensitive to the shape of the QD, resulting in changes of several orders of magnitude in the electron transfer and retention times. (C) 2002 American Institute of Physics.

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页码：6182 / 6187

页数：6

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