Visible photoluminescence of SiO2 implanted with carbon and silicon

被引：36

作者：

Garrido, B ^{[1
]}

Lopez, M ^{[1
]}

Ferre, S ^{[1
]}

RomanoRodriguez, A ^{[1
]}

PerezRodriguez, A ^{[1
]}

Ruterana, P ^{[1
]}

Morante, JR ^{[1
]}

机构：

[1] INST SCI MAT & RAYONNEMENT, LERMAT, URA CNRS 1317, F-14050 CAEN, FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/S0168-583X(96)00488-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The structures formed after sequential implantation of silicon plus carbon in amorphous SiO2 and annealing presented strong photoluminescence bands in the deep red (1.4-1.6 eV) and green (2.0-2.2 eV) regions of the visible spectrum. The energy and intensity of the bands depended strongly on the temperature and duration of annealing. Different behaviours with post-processing were encountered for the red and green bands, including deexcitation kinetics and structural origin. The FTIR, Raman and HRTEM measurements showed that silicon crystallites were reponsible for the red emitting band while carbon aggregates were probably the origin of the green one.

引用

页码：101 / 105

页数：5

共 18 条

[1] Electroluminescence analysis of the structural damage created in SiO2/Si systems by Ar ion implantation [J].

Bota, S ;

Garrido, B ;

Morante, JR ;

Baraban, A ;

Konorov, PP .

SOLID-STATE ELECTRONICS, 1996, 39 (03) :355-359

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[3] THEORY OF THE LUMINESCENCE OF POROUS SILICON [J].

DELERUE, C ;

LANNOO, M ;

ALLAN, G .

JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) :249-256

[4] USE OF RAMAN-SCATTERING TO INVESTIGATE DISORDER AND CRYSTALLITE FORMATION IN AS-DEPOSITED AND ANNEALED CARBON-FILMS [J].

DILLON, RO ;

WOOLLAM, JA ;

KATKANANT, V .

PHYSICAL REVIEW B, 1984, 29 (06) :3482-3489

[5]

FORSYTHE EW, 1994, MRS FALL M BOST DEC

[6] CONFIGURATIONAL STATISTICAL-MODEL FOR THE DAMAGED STRUCTURE OF SILICON-OXIDE AFTER ION-IMPLANTATION [J].

GARRIDO, B ;

SAMITIER, J ;

MORANTE, JR ;

MONTSERRAT, J ;

DOMINGUEZ, C .

PHYSICAL REVIEW B, 1994, 49 (21) :14845-14849

[7]

GARRIDO B, 1996, IN PRESS THIN SOLID

[8] PHOTOLUMINESCENCE SPECTRA OF CARBON CLUSTERS EMBEDDED IN SIO2 [J].

HAYASHI, S ;

KATAOKA, M ;

YAMAMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (2B) :L274-L276

[9] VISIBLE PHOTOLUMINESCENCE AT ROOM-TEMPERATURE FROM MICROCRYSTALLINE SILICON PRECIPITATES IN SIO2 FORMED BY ION-IMPLANTATION [J].

KOMODA, T ;

KELLY, J ;

CRISTIANO, F ;

NEJIM, A ;

HEMMENT, PLF ;

HOMEWOOD, KP ;

GWILLIAM, R ;

MYNARD, JE ;

SEALY, BJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2) :387-391

[10] PHOTOLUMINESCENCE STUDIES OF POROUS SILICON-CARBIDE [J].

KONSTANTINOV, AO ;

HENRY, A ;

HARRIS, CI ;

JANZEN, E .

APPLIED PHYSICS LETTERS, 1995, 66 (17) :2250-2252

← 1 2 →