Electroluminescence analysis of the structural damage created in SiO2/Si systems by Ar ion implantation

被引：11

作者：

Bota, S ^{[1
]}

Garrido, B ^{[1
]}

Morante, JR ^{[1
]}

Baraban, A ^{[1
]}

Konorov, PP ^{[1
]}

机构：

[1] ST PETERSBURG STATE UNIV,INST PHYS,ST PETERSBURG 198904,RUSSIA

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 03期

关键词：

D O I：

10.1016/0038-1101(95)00137-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of ion implantation of Ar in defect generation in Si/SiO2 structures is examined by the application of an electroluminescence technique. The nature of the electroluminescence spectra is examined and bands at 1.9, 2.7 and 4.3 eV are identified. Each band is related to different intrinsic defects in the oxide. Structural analysis of the irradiated SiO2 films, performed with i.r. spectroscopy, points to atomic displacements and broken Si-O bonds as the origin of the damage induced by the irradiation.

引用

页码：355 / 359

页数：5

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