CONFIGURATIONAL STATISTICAL-MODEL FOR THE DAMAGED STRUCTURE OF SILICON-OXIDE AFTER ION-IMPLANTATION

被引：20

作者：

GARRIDO, B ^{[1
]}

SAMITIER, J ^{[1
]}

MORANTE, JR ^{[1
]}

MONTSERRAT, J ^{[1
]}

DOMINGUEZ, C ^{[1
]}

机构：

[1] CSIC,CTR NACL MICROELECTR,E-08193 BARCELONA,SPAIN

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 21期

关键词：

D O I：

10.1103/PhysRevB.49.14845

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A configurational model for silicon oxide damaged after a high-dose ion implantation of a nonreactive species is presented. Based on statistics of silicon-centered tetrahedra, the model takes into account not only the closest environment of a given silicon atom, but also the second neighborhood, so it is specified whether the oxygen attached to one given silicon is bridging two tetrahedra or not. The frequencies and intensities of infrared vibrational bands have been calculated by averaging over the distributions and these results are in agreement with the ones obtained from infrared experimental spectra. Likewise, the chemical shifts obtained from x-ray photoelectron spectroscopy (XPS) analysis are similar to the reported values for the charge-transfer model of SiO(x) compounds.

引用

收藏

页码：14845 / 14849

页数：5

相关论文

共 21 条

[1] DIELECTRIC FUNCTION OF SI-SIO2 AND SI-SI3N4 MIXTURES [J].

ASPNES, DE ;

THEETEN, JB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4928-4935

[2] STRUCTURAL AND ELECTRICAL DAMAGE INDUCED BY HIGH-ENERGY HEAVY-IONS IN SIO2/SI STRUCTURES [J].

BUSCH, MC ;

SLAOUI, A ;

SIFFERT, P ;

DOORYHEE, E ;

TOULEMONDE, M .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (06) :2596-2601

[3] CONFIGURATIONAL STATISTICS IN A-SIXNYHZ ALLOYS - A QUANTITATIVE BONDING ANALYSIS [J].

BUSTARRET, E ;

BENSOUDA, M ;

HABRARD, MC ;

BRUYERE, JC ;

POULIN, S ;

GUJRATHI, SC .

PHYSICAL REVIEW B, 1988, 38 (12) :8171-8184

[4]

CR Helms, 1988, SI SIO2 SYSTEM

[5] RADIATION-DAMAGE AND THE ROLE OF STRUCTURE IN AMORPHOUS SIO2 [J].

DEVINE, RAB .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 46 (1-4) :244-251

[6] ETCHING RATE MODIFICATION IN SILICON-OXIDE BY ION-IMPLANTATION AND RAPID THERMAL ANNEALING [J].

DOMINGUEZ, C ;

GARRIDO, B ;

MONTSERRAT, J ;

MORANTE, JR ;

SAMITIER, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 :1367-1370

[7] INFRARED OPTICAL-PROPERTIES OF SILICON OXYNITRIDE FILMS - EXPERIMENTAL-DATA AND THEORETICAL INTERPRETATION [J].

ERIKSSON, TS ;

GRANQVIST, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) :2081-2091

[8] RAMAN-SPECTROSCOPIC INVESTIGATION OF THE STRUCTURE OF SILICATE-GLASSES .3. RAMAN INTENSITIES AND STRUCTURAL UNITS IN SODIUM-SILICATE GLASSES [J].

FURUKAWA, T ;

FOX, KE ;

WHITE, WB .

JOURNAL OF CHEMICAL PHYSICS, 1981, 75 (07) :3226-3237

[9] INFLUENCE OF THE SILICON-WAFER CLEANING TREATMENT ON THE SI/SIO2 INTERFACES ANALYZED BY INFRARED-SPECTROSCOPY [J].

GARRIDO, B ;

SAMITIER, J ;

MORANTE, JR ;

FONSECA, L ;

CAMPABADAL, F .

APPLIED SURFACE SCIENCE, 1992, 56-8 :861-865

[10]

GRUNTHANER PJ, 1987, J APPL PHYS, V61, P630