INFLUENCE OF THE SILICON-WAFER CLEANING TREATMENT ON THE SI/SIO2 INTERFACES ANALYZED BY INFRARED-SPECTROSCOPY

被引：9

作者：

GARRIDO, B ^{[1
]}

SAMITIER, J ^{[1
]}

MORANTE, JR ^{[1
]}

FONSECA, L ^{[1
]}

CAMPABADAL, F ^{[1
]}

机构：

[1] CTR NACL MICROELECTRON, E-08193 BARCELONA, SPAIN

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90351-W

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of different cleaning processes on the structure of thin silicon oxide layers has been analyzed. The reflection-absorption infrared spectra obtained have allowed the determination of the stress values. We show that these values depend on the oxidation process, annealing history and mainly on the last step of the cleaning method.

引用

页码：861 / 865

页数：5

共 18 条

[1] INFRARED ABSORPTION AT LONGITUDINAL OPTIC FREQUENCY IN CUBIC CRYSTAL FILMS
BERREMAN, DW
[J]. PHYSICAL REVIEW, 1963, 130 (06): : 2193 - &
[2] CORRELATION BETWEEN MIDGAP INTERFACE STATE DENSITY AND THICKNESS-AVERAGED OXIDE STRESS AND STRAIN AT SI SIO2 INTERFACES FORMED BY THERMAL-OXIDATION OF SI
BJORKMAN, CH
FITCH, JT
LUCOVSKY, G
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (20) : 1983 - 1985
[3] SILICON-SILICON DIOXIDE INTERFACE - AN INFRARED STUDY
BOYD, IW
WILSON, JIB
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3195 - 3200
[4] DECONVOLUTION OF THE INFRARED-ABSORPTION PEAK OF THE VIBRATIONAL STRETCHING MODE OF SILICON DIOXIDE - EVIDENCE FOR STRUCTURAL ORDER
BOYD, IW
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 418 - 420
[5] STRESS EVOLUTION AND POINT-DEFECT GENERATION DURING OXIDATION OF SILICON
CHARITAT, G
MARTINEZ, A
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 909 - 913
[6] EFFECT OF SIO2 SURFACE-CHEMISTRY ON THE OXIDATION OF SILICON
DELARIOS, JM
KAO, DB
HELMS, CR
DEAL, BE
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (08) : 715 - 717
[7] PARALLEL OXIDATION MODEL FOR SI INCLUDING BOTH MOLECULAR AND ATOMIC OXYGEN MECHANISMS
DELARIOS, JM
HELMS, CR
KAO, DB
DEAL, BE
[J]. APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 89 - 102
[8] FICH JT, 1989, J VAC SCI TECHNOL B, V7, P775
[9] THE INFLUENCE OF SILICON SURFACE CLEANING PROCEDURES ON SILICON OXIDATION
GOULD, G
IRENE, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 1031 - 1033
[10] ELECTRIC FIELD STRENGTHS AT TOTALLY REFLECTING INTERFACES
HARRICK, NJ
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1965, 55 (07) : 851 - &

← 1 2 →