STRESS EVOLUTION AND POINT-DEFECT GENERATION DURING OXIDATION OF SILICON

[1] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6788 - 6796

[2] OXIDATION-INDUCED POINT-DEFECTS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1093 - 1097

[3] OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1030 - 1033

[4] ANTONIADIS DA, 1978, J ELECTROCHEM SOC, V125, P814

[5] SURFACE CHARGE AND STRESS IN SI-SIO2 SYSTEM [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1367 - 1375

[6] CHARITAT G, 1982, THESIS LYON

[7] CHARITAT G, UNPUB

[8] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[9] DEAL BE, 1978, J ELECTROCHEM SOC, V125, P578

[10] STRESS-RELAXATION IN CRYSTALS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 93 (01): : 11 - 43

[1] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6788 - 6796

[2] OXIDATION-INDUCED POINT-DEFECTS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1093 - 1097

[3] OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1030 - 1033

[4] ANTONIADIS DA, 1978, J ELECTROCHEM SOC, V125, P814

[5] SURFACE CHARGE AND STRESS IN SI-SIO2 SYSTEM [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1367 - 1375

[6] CHARITAT G, 1982, THESIS LYON

[7] CHARITAT G, UNPUB

[8] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[9] DEAL BE, 1978, J ELECTROCHEM SOC, V125, P578

[10] STRESS-RELAXATION IN CRYSTALS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 93 (01): : 11 - 43